The Javey group at UC Berkeley has developed a novel method for placing III-V compound structures on silicon substrates. The method appeared in Nature 468, 286-9 (11 November 2010) [doi:10.1038/nature09541].
After growing and patterning thin InAs on a suitable III-V substrate, the patterned elements are picked up by a silicon rubber carrier and transferred to an oxidized silicon wafer, where further processing can take place.
Longer blog postings can be found at IEEE Spectrum , and at Technology Review.