To date, field effect transistors based on graphene have all introduced a band gap into the graphene beneath the gate. Various treatments like oxidation, hydrogenation, etc. are difficult to control and furthermore adversely impact the novel properties of pristine graphene which one would like to retain. In the May 28 issue of PNAS, a joint work between researchers at KAIST and KIAS in Korea and at CalTech in southern California proposes using pristine graphene with a saw-toothed gate field instead of the ordinary rectangular gate field. Since gate geometry is something we know how to engineer, this proposal may lead to more readily manufacturable digital graphene devices.