Patents
- “Multi-function module for an electron beam column”, US Patent 7,800,075 B2, 21 Sep 2010
- “Electron anti-fogging baffle used as a detector”, US Patent 7,514,682 B2, 07 Apr 2009
- “Critical dimension effects correction in a raster pattern generator”, US Patent 7,498,591 B2, 03 Mar 2009
- “Writing a circuit design pattern with shaped particle beam flashes”, US Patent 7,476,880 B2, 13 Jan 2009
- “Placement effects correction in a raster pattern generator”, US Patent 7,476,879 B2, 13 Jan 2009
- “Electron beam column for writing shaped electron beams”, US Patent 7,427,765 B2, 23 Sep 2008
- “Beam exposure writing strategy system and method”, US Patent 7,244,953 B2, 17 Jul 2007
- “Electrostatic particle beam deflector”, US Patent 7,209,055 B1, 24 Apr 2007
- “Method and apparatus for fast signal convolution using separated-spline kernel”, US Patent 6,912,323 B2, 28 Jun 2005
- “Border modification for proximity effect correction in lithography”, US Patent 6,436,607 B1, 20 Aug 2002
Conference and Journal Articles
- “Raster shaped beam pattern generation for 70 nm photomask production”, Proc SPIE 4889 (2002) 168-76
- “High throughput electron-beam lithography with a raster-scanned, variably shaped beam”, JVST B 19(6) (2001) 2455-8
- “Contrast limitations in electron-beam lithography”, JVST B 17(6) (1999) 2945-7
- “Fabrication of submicron apertures in thin membranes of silicon nitride”, JVST B 11(2) (1993) 259-62
- “Phase-shift mask technology: requirements for e-beam mask lithography”, Proc SPIE 1464 (1991) 314-26
- “Proximity effect correction at 10 keV using GHOST and sizing for 0.4 µm mask lithography”, JSVT B 8(6) (1990) 1775-9
- “Phase-slips in the flow of superfluid 4He through a submicron orifice”, Physica B 165-166 pt. 1 (1990) 753-4